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Mosaic for ir imaging using pyroelectric sensors in a bipolar transistor array

閱讀：465發(fā)布：2023-06-06

專利匯可以提供Mosaic for ir imaging using pyroelectric sensors in a bipolar transistor array專利檢索，專利查詢，專利分析的服務(wù)。并且A monolithic integrated circuit for a bipolar transistor array of pyroelectric sensors to provide a spectral response to incident IR radiation. A matrix is provided by rows and columns of the sensors formed in a semiconductive substrate. Spaced parallel collector diffusions in the substrate are of one type conductivity which, in turn, receive base region diffusions of the other type conductivity thus forming a P-N junction. Pyroelectric thin films are deposited as isolated regions above the collector regions. In one form, the pyroelectric film has edge electrodes each extending to one of the underlying base and collector regions which are electrically insulated from the film by an oxide layer. An alternative to this form provides that the film is thermally insulated by an air gap from the collector regions. In a second alternative form, a surface electrode is used wherein the pyroelectric film is deposited directly on the collector and the surface electrode overlies the film and joins with the diffused base region. Emitter electrodes extend transverse to the orthogonal arrangement of the diffused collector and base regions. The emitter electrodes have a diffused contact region into one of the regions formed by the P-N junction for applying a reverse-biased charge to the junction. The pyroelectric charge neutralizes this reverse bias and the video signal is a measure of the current surge needed to restore the charge on the reverse-biased junction.，下面是Mosaic for ir imaging using pyroelectric sensors in a bipolar transistor array專利的具體信息內(nèi)容。

1. An integrated array of pyroelectric sensors responsive to incident IR radiation comprising: a plurality of pyroelectric sensors arranged in the form of a column such that a plurality of said columns defines an array of said sensors each for thermal transformation of incident IR radiation into an electrical charge proportional thereto; an integrated circuit supporting said sensors including a reverse-biased P-N junction for integration of said electrical charge from each of said pyroelectric sensors; and emitter means electrically joined to one member forming said P-N junction for detecting the integrated electrical charge stored by said reverse-biased P-N junction.
2. The integrated array of pyroelectric sensors according to claim 1 wherein each of said pyroelectric sensors include a thin film deposit of pyroelectric material and an electrode electrically joined to each member forming said P-N junction for contacting one of two opposed surfaces of said pyroelectric material.
3. The integrated array of pyroelectric sensors according to claim 2 wherein said pyroelectric deposit includes a thin film of bismuth titanate.
4. The integrated array of pyroelectric sensors according to claim 2 wherein said pyroelectric deposit includes a thin film of barium strontium niobate.
5. An integrated bipolar array of pyroelectric sensors responsive to incident IR radiation, said sensors being arranged as a plurality of rows aNd columns thereby forming a matrix, said pyroelectric sensors comprising: a substrate of semiconductive material, spaced orthogonal collector regions of one type conductivity diffused into said substrate, a base region of the other type conductivity diffused into said collector regions to form a P-N junction therewith, pyroelectric film means formed as separate regions overlying each one of said spaced orthogonal collector regions to thereby form a matrix of pyroelectric sensors, an electrode for joining a surface on said pyroelectric film means to an underlying base region such that the opposing surface of the film means is conductively joined to a collector region, and emitter electrode conductively joined to one diffusion forming said P-N junction, said emitter electrode extending transversely to the orthogonal arrangement of said collector and said base.
6. The pyroelectric sensors according to claim 5 further comprising an oxide of said substrate for forming an insulation barrier between adjacent ones of said pyroelectric thin film means.
7. The pyroelectric sensors according to claim 5 wherein said electrode for joining a surface on said pyroelectric film means includes a first edge electrode extending along one edge of said film means and a second edge electrode extending along an edge of said film means opposed to the said first electrode.
8. The pyroelectric sensors according to claim 5 wherein said regions of said pyroelectric film are deposited upon said collector region, and said electrode for joining a surface on said pyroelectric film means includes a surface electrode deposited on the exposed face surface of each region of said film.
9. The pyroelectric sensors according to claim 5 wherein said emitter electrodes include a diffusion extending into one of said diffusions forming said P-N junction.
10. The pyroelectric sensors according to claim 9 wherein said emitter electrode is further defined to include a diffusion extending into said base diffusion.
11. The pyroelectric sensors according to claim 5 further comprising an insulation bridge including an air gap to isolate said pyroelectric thin film means thermally from said substrate and electrically from said collector regions.
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